Magneto-Electroacoustic Dynamics in a Straintronic Random Access Memory Cell

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Straintronic magneto-tunneling-junction based ternary content addressable memory

memory S. Dey Manasi, M. M. Al Rashid, J. Atulasimha, S. Bandyopadhyay, and A. R. Trivedi Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 USA Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University USA, Richmond, VA 23284, USA Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University USA,...

متن کامل

Energy Efficient Novel Design of Static Random Access Memory Memory Cell in Quantum-dot Cellular Automata Approach

This paper introduces a peculiar approach of designing Static Random Access Memory (SRAM) memory cell in Quantum-dot Cellular Automata (QCA) technique. The proposed design consists of one 3-input MG, one 5-input MG in addition to a (2×1) Multiplexer block utilizing the loop-based approach. The simulation results reveals the excellence of the proposed design. The proposed SRAM cell achieves 16% ...

متن کامل

Molecular random access memory cell

Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times .15 min have been observed. © 2001 American Institute of Physics. @DOI: 10.1063/1.1...

متن کامل

Resistive Random Access Memory (ReRAM): A Metal Oxide Memory Cell

We review the recent progress in the ReRAM technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. We first provide a brief historical overview of the research in this field. We also provide a technological overview and the epoch-making achievements, followed by an account ...

متن کامل

Radiations On Static Random Access Memory Cell

With increased memory capacity usually comes increased bit line parasitice capacitance. This increased bit line capacitance in turn slows down voltage sensing and makes bit line voltage swing energy expensive resulting in slower more energy hungry memories. A full description of the various methods is beyond the scope of this article; instead, the focus is on providing primary developments that...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Technical Physics Letters

سال: 2020

ISSN: 1063-7850,1090-6533

DOI: 10.1134/s1063785020010113